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November 2013
FDD5N50NZF
N-Channel UniFET TM FRFET ? MOSFET
500 V, 3.7 A, 1.75 Ω
Features
? R DS(on) = 1.47 Ω (Typ.) @ V GS = 10 V, I D = 1.85 A
? Low Gate Charge (Typ. 9 nC)
? Low C rss (Typ. 4 pF)
? 100% Avalanche Tested
? Improved dv/dt Capability
? ESD Imoroved Capability
? RoHS Compliant
Applications
? LCD/LED/PDP TV
? Lighting
? Uninterruptible Power Supply
Description
UniFET TM II MOSFET is Fairchild Semiconductor ’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. The body diode’s reverse recovery performance of
UniFET II FRFET ? MOSFET has been enhanced by lifetime
control. Its t rr is less than 100nsec and the reverse dv/dt immu-
nity is 15V/ns while normal planar MOSFETs have over
200nsec and 4.5V/nsec respectively. Therefore, it can remove
additional component and improve system reliability in certain
applications in which the performance of MOSFET’s body diode
is significant. This device family is suitable for switching power
converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
D
G
S
D-PAK
G
MOSFET Maximum Ratings T C = 25 o C unless otherwise noted.
S
Symbol
V DSS
Drain to Source Voltage
Parameter
FDD5N50NZFTM
500
Unit
V
V GSS
I D
Gate to Source Voltage
Drain Current
- Continuous (T C = 25 o C)
- Continuous (T C = 100 o C)
±25
3.7
2.2
V
A
I DM
Drain Current
- Pulsed
(Note 1)
14
A
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T C = 25 o C)
- Derate Above 25 o C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
165
3.3
6.25
20
62.5
0.5
mJ
A
mJ
V/ns
W
W/ o C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
-55 to +150
300
o
o
C
C
Thermal Characteristics
Symbol
Parameter
FDD5N50NZFTM
Unit
R θ JC
R θ JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
2
62.5
o
C/W
?209 Fairchild Semiconductor Corporation
FDD5N50NZF Rev. C1
1
www.fairchildsemi.com
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FDD5N50TM_WS 功能描述:MOSFET UniFET 500V 4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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